Dual MOSFETs :
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Power Dissipation Pd
=1.3W
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Drain Source Voltage Vds N Channel
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Packaging
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| Compare | Manufacturer Part No | Order Code | Manufacturer / Description | Availability | Price For | Price (inc GST) | Quantity | Transistor Polarity | Channel Type | Drain Source Voltage Vds N Channel | Drain Source Voltage Vds | Drain Source Voltage Vds P Channel | Continuous Drain Current Id | On Resistance Rds(on) | Continuous Drain Current Id N Channel | Continuous Drain Current Id P Channel | Drain Source On State Resistance N Channel | Transistor Mounting | Drain Source On State Resistance P Channel | Rds(on) Test Voltage | Transistor Case Style | Gate Source Threshold Voltage Max | No. of Pins | Power Dissipation Pd | Power Dissipation N Channel | Power Dissipation P Channel | Operating Temperature Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Each (Supplied on Cut Tape) Re-Reel | 100+ CNY2.940(CNY3.3222) 500+ CNY2.890(CNY3.2657) 1000+ CNY2.830(CNY3.1979) 5000+ CNY2.770(CNY3.1301) | N Channel | N Channel | 20V | 20V | 20V | 8A | 0.019ohm | 8A | 8A | 0.024ohm | Surface Mount | - | 4.5V | SOIC | 900mV | 8Pins | 1.3W | 1.3W | 1.3W | 150°C | ||||||
Each (Supplied on Cut Tape) Re-Reel | 100+ CNY2.240(CNY2.5312) 500+ CNY1.700(CNY1.921) 1000+ CNY1.300(CNY1.469) 5000+ CNY1.220(CNY1.3786) | Complementary N and P Channel | Complementary N and P Channel | 25V | 25V | 25V | 500mA | 3.8ohm | 500mA | 500mA | 4ohm | Surface Mount | 0.055ohm | 4.5V | TSOT-26 | 850mV | 6Pins | 1.3W | 1.3W | 1.3W | 150°C | ||||||

