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DMC1030UFDBQ-7
Dual MOSFET, Complementary N and P Channel, 12 V, 12 V, 5.1 A, 5.1 A, 0.034 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerDIODES INC.
Manufacturer Part NoDMC1030UFDBQ-7Copy
Manufacturer Standard Lead Time77 weeks
Order Code
Re-Reel3944019RL
Cut Tape3944019
Your Part Number
350 In Stock
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350 Delivery in 5-6 Business Days(UK stock)
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Re-Reel | 1 | CNY9.610 | CNY9.61 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY9.610 (CNY10.8593) |
| 10+ | CNY6.000 (CNY6.780) |
| 100+ | CNY3.930 (CNY4.4409) |
| 500+ | CNY3.860 (CNY4.3618) |
| 1000+ | CNY3.780 (CNY4.2714) |
| 5000+ | CNY3.700 (CNY4.181) |
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMC1030UFDBQ-7Copy
Manufacturer Standard Lead Time77 weeks
Order Code
Re-Reel3944019RL
Cut Tape3944019
Technical Datasheet
Channel TypeComplementary N and P Channel
Transistor PolarityComplementary N and P Channel
Drain Source Voltage Vds N Channel12V
Drain Source Voltage Vds12V
Drain Source Voltage Vds P Channel12V
Continuous Drain Current Id5.1A
Continuous Drain Current Id N Channel5.1A
On Resistance Rds(on)0.017ohm
Continuous Drain Current Id P Channel5.1A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.034ohm
Rds(on) Test Voltage4.5V
Drain Source On State Resistance P Channel0.059ohm
Transistor Case StyleU-DFN2020
Gate Source Threshold Voltage Max1V
Power Dissipation Pd1.36W
No. of Pins6Pins
Power Dissipation N Channel1.36W
Power Dissipation P Channel1.36W
Operating Temperature Max150°C
Product Range-
QualificationAEC-Q101
Automotive Qualification StandardAEC-Q101
SVHCNo SVHC (04-Feb-2026)
Technical Specifications
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds N Channel
12V
Drain Source Voltage Vds P Channel
12V
Continuous Drain Current Id N Channel
5.1A
Continuous Drain Current Id P Channel
5.1A
Drain Source On State Resistance N Channel
0.034ohm
Drain Source On State Resistance P Channel
0.059ohm
Gate Source Threshold Voltage Max
1V
No. of Pins
6Pins
Power Dissipation P Channel
1.36W
Product Range
-
Automotive Qualification Standard
AEC-Q101
Transistor Polarity
Complementary N and P Channel
Drain Source Voltage Vds
12V
Continuous Drain Current Id
5.1A
On Resistance Rds(on)
0.017ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
4.5V
Transistor Case Style
U-DFN2020
Power Dissipation Pd
1.36W
Power Dissipation N Channel
1.36W
Operating Temperature Max
150°C
Qualification
AEC-Q101
SVHC
No SVHC (04-Feb-2026)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85411000
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (04-Feb-2026)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001