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BSS127S-7
Power MOSFET, N Channel, 600 V, 50 mA, 160 ohm, SOT-23, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerDIODES INC.
Manufacturer Part NoBSS127S-7Copy
Order Code
Cut Tape3127244
Cut Tape3127244RL
Your Part Number
2,532 In Stock
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2,532 Delivery in 5-6 Business Days(UK stock)
| Quantity | Price (inc GST) |
|---|---|
| 5+ | CNY2.440 (CNY2.7572) |
| 50+ | CNY2.000 (CNY2.260) |
| 100+ | CNY1.550 (CNY1.7515) |
| 500+ | CNY0.900 (CNY1.017) |
| 1500+ | CNY0.882 (CNY0.9967) |
Price for:Each (Supplied on Cut Tape)
Minimum: 5
Multiple: 5
CNY12.20 (CNY13.79 inc GST)
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerDIODES INC.
Manufacturer Part NoBSS127S-7Copy
Order Code
Cut Tape3127244
Cut Tape3127244RL
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id50mA
Drain Source On State Resistance160ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4.5V
Power Dissipation610mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
BSS127S-7 is a N-channel enhancement mode field MOSFET. This new generation uses advanced planar technology MOSFET, providing excellent high voltage and fast switching, making it ideal for small-signal and level shift applications. Typical applications include motor control, backlighting, DC-DC converters, power management functions.
- Low input capacitance, low input/output leakage
- High BVDSS rating for power application
- Drain-source voltage is 600V at TA=+25°C
- Gate-source voltage is ±20V at TA=+25°C
- Continuous drain current is 50mA at TA=+25°C, VGS=10V, steady state
- Pulsed drain current is 0.16A at TA=+25°C, TSP=+25°C
- Power dissipation at TA=+25°C is 0.61W
- Static drain-source on-resistance is 80 ohm typ at VGS=10V, ID=16mA, TA=+25°C
- SOT23 case
- Operating and storage temperature range from -55 to +150°C
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
50mA
Transistor Case Style
SOT-23
Rds(on) Test Voltage
10V
Power Dissipation
610mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
600V
Drain Source On State Resistance
160ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4.5V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000005