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DMG1029SVQ-7
Dual MOSFET, Complementary N and P Channel, 60 V, 60 V, 500 mA, 500 mA, 0.02 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerDIODES INC.
Manufacturer Part NoDMG1029SVQ-7Copy
Manufacturer Standard Lead Time97 weeks
Order Code
Re-Reel3944063RL
Cut Tape3944063
Your Part Number
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Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Re-Reel | 5 | CNY4.780 | CNY23.90 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 5+ | CNY4.780 (CNY5.4014) |
| 10+ | CNY2.930 (CNY3.3109) |
| 100+ | CNY1.850 (CNY2.0905) |
| 500+ | CNY1.390 (CNY1.5707) |
| 1000+ | CNY1.150 (CNY1.2995) |
| 5000+ | CNY0.904 (CNY1.0215) |
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMG1029SVQ-7Copy
Manufacturer Standard Lead Time97 weeks
Order Code
Re-Reel3944063RL
Cut Tape3944063
Technical Datasheet
Transistor PolarityComplementary N and P Channel
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds N Channel60V
Drain Source Voltage Vds60V
Continuous Drain Current Id500mA
Drain Source Voltage Vds P Channel60V
Continuous Drain Current Id N Channel500mA
On Resistance Rds(on)1.3ohm
Continuous Drain Current Id P Channel500mA
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.02ohm
Rds(on) Test Voltage10V
Drain Source On State Resistance P Channel4ohm
Transistor Case StyleSOT-563
Gate Source Threshold Voltage Max2.5V
Power Dissipation Pd1W
No. of Pins6Pins
Power Dissipation N Channel1W
Power Dissipation P Channel1W
Operating Temperature Max150°C
Product Range-
QualificationAEC-Q101
Automotive Qualification StandardAEC-Q101
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
Transistor Polarity
Complementary N and P Channel
Drain Source Voltage Vds N Channel
60V
Continuous Drain Current Id
500mA
Continuous Drain Current Id N Channel
500mA
Continuous Drain Current Id P Channel
500mA
Drain Source On State Resistance N Channel
0.02ohm
Drain Source On State Resistance P Channel
4ohm
Gate Source Threshold Voltage Max
2.5V
No. of Pins
6Pins
Power Dissipation P Channel
1W
Product Range
-
Automotive Qualification Standard
AEC-Q101
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds
60V
Drain Source Voltage Vds P Channel
60V
On Resistance Rds(on)
1.3ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Transistor Case Style
SOT-563
Power Dissipation Pd
1W
Power Dissipation N Channel
1W
Operating Temperature Max
150°C
Qualification
AEC-Q101
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85411000
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001