打印页面
DMN6068SE-13
功率场效应管, MOSFET, N通道, 60 V, 4.1 A, 0.068 ohm, SOT-223, 表面安装
607 有货
782 您现在可以预订货品了
607 件可于 5-6 个工作日内送达(英国 库存)
包装选项
| 包装类型 | 数量 | 单价 (不含增值税): | 合计 |
|---|---|---|---|
| 切割卷带 | 5 | CNY3.580 | CNY17.90 |
切割卷带 & 复卷
| 数量 | 价钱 (含税) |
|---|---|
| 5+ | CNY3.580 (CNY4.0454) |
| 50+ | CNY2.750 (CNY3.1075) |
| 250+ | CNY2.700 (CNY3.051) |
| 1000+ | CNY2.640 (CNY2.9832) |
| 2000+ | CNY2.590 (CNY2.9267) |
品項附註
此订单的信息已添加到您的订单确认邮件、发票和发货通知中。
产品概述
DMN6068SE-13 is a N-channel enhancement mode MOSFET in a 3 pin SOT223 package. This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Typical applications include motor control, transformer driving switch, DC-DC converters, power management functions and uninterrupted power supply.
- Dain-source voltage is 60V
- Gate-source voltage is ±20V
- Pulsed drain current is 20.8A
- Continuous drain current is 4.5A (VGS = 10V, TA = +70°C)
- Low on-resistance
- Fast switching speed
- 100% unclamped inductive switching ensures more reliable and robust end application
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技术规格
通道类型
N通道
电流, Id 连续
4.1A
晶体管封装类型
SOT-223
Rds(on)测试电压
10V
功率耗散
2W
工作温度最高值
150°C
合规
-
SVHC(高度关注物质)
Lead (04-Feb-2026)
漏源电压, Vds
60V
漏源接通状态电阻
0.068ohm
晶体管安装
表面安装
阈值栅源电压最大值
3V
针脚数
4引脚
产品范围
-
湿气敏感性等级
MSL 1 -无限制
法律与环境
原产地：
进行最后一道重要生产流程所在的地区原产地：China
进行最后一道重要生产流程所在的地区
进行最后一道重要生产流程所在的地区原产地：China
进行最后一道重要生产流程所在的地区
税则号：85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS 合规：是
RoHS
RoHS 邻苯二甲酸盐合规:是
RoHS
SVHC:Lead (04-Feb-2026)
下载产品合规证书
产品合规证书
重量（千克）：.000121