DGD2101MS8-13

DGD2101MS8-13 is a high-voltage / high-speed gate driver capable of driving N-channel MOSFETs and IGBTs in a high-side/low-side configuration. High-voltage processing techniques enable the DGD2101M’s high side to switch to 600V in a bootstrap operation. The 50ns (max) propagation delay matching between the high and the low side drivers allows high frequency switching. The DGD2101M logic inputs are compatible with standard TTL and CMOS levels (down to 3.3V) for easy interfacing with controlling devices. The driver outputs feature high-pulse current buffers designed for minimum driver cross conduction. The low-side gate driver and logic share a common ground. Typical applications include DC-DC converters, DC-AC inverters, AC-DC power supplies, motor controls and class D power amplifiers.

• Floating high-side driver in bootstrap operation to 600V
• Drives two N-channel MOSFETs or IGBTs in high-side /low side configuration
• Outputs tolerant to negative transients
• Wide low-side gate driver and logic supply range from 10V to 20V
• Undervoltage lockout for VCC
• Extended temperature range from -40°C to +125°C