打印页面
BSS8402DW-7-F
双路场效应管, MOSFET, 互补N与P沟道, 60 V, 50 V, 115 mA, 130 mA, 7.5 ohm
可订购
有货时请通知我
包装选项
| 包装类型 | 数量 | 单价 (不含增值税): | 合计 |
|---|---|---|---|
| 切割卷带 | 5 | CNY4.300 | CNY21.50 |
切割卷带 & 复卷
| 数量 | 价钱 (含税) |
|---|---|
| 5+ | CNY4.300 (CNY4.859) |
| 50+ | CNY3.520 (CNY3.9776) |
| 100+ | CNY2.730 (CNY3.0849) |
| 500+ | CNY1.800 (CNY2.034) |
| 1500+ | CNY1.770 (CNY2.0001) |
品項附註
此订单的信息已添加到您的订单确认邮件、发票和发货通知中。
产品信息
产品概述
BSS8402DW-7-F is a complementary pair enhancement mode MOSFET. This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and maintains superior switching performance, making it ideal for high efficiency power management applications. Typical applications include general purpose interfacing switch, power management functions, analogue switch.
- Low on-resistance, low gate threshold voltage
- Low input capacitance, fast switching speed
- Low input/output leakage, complementary pair
- Drain source voltage is 60V at TA = +25°C, P/N channel
- Continuous drain current is 115mA at TA = +25°C, P/N channel
- Drain source on state resistance is 13.5ohm at TA = +25°C, P/N channel
- Power dissipation is 200mW at TA = +25°C, P/N channel
- SOT363 case
- Operating and storage temperature range from -55 to +150°C
技术规格
通道类型
互补N与P沟道
漏源电压Vds P沟道
50V
连续漏极电流 Id P沟道
130mA
漏源导通电阻P沟道
10ohm
针脚数
6引脚
耗散功率P沟道
200mW
产品范围
-
湿气敏感性等级
MSL 1 -无限制
漏源电压Vds N沟道
60V
连续漏极电流 Id N沟道
115mA
漏源通态电阻N沟道
7.5ohm
晶体管封装类型
SOT-363
耗散功率N沟道
200mW
工作温度最高值
150°C
合规
-
SVHC(高度关注物质)
No SVHC (25-Jun-2025)
BSS8402DW-7-F 的替代之选
找到 1 件产品
法律与环境
原产地：
进行最后一道重要生产流程所在的地区原产地：China
进行最后一道重要生产流程所在的地区
进行最后一道重要生产流程所在的地区原产地：China
进行最后一道重要生产流程所在的地区
税则号：85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS 合规：是
RoHS
RoHS 邻苯二甲酸盐合规:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下载产品合规证书
产品合规证书
重量（千克）：.000006