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| 数量 | 价钱 (含税) |
|---|---|
| 1+ | CNY41.130 (CNY46.4769) |
| 10+ | CNY38.540 (CNY43.5502) |
| 25+ | CNY37.410 (CNY42.2733) |
| 50+ | CNY35.840 (CNY40.4992) |
| 100+ | CNY35.010 (CNY39.5613) |
| 250+ | CNY34.340 (CNY38.8042) |
| 500+ | CNY33.660 (CNY38.0358) |
| 1000+ | CNY33.340 (CNY37.6742) |
产品信息
产品概述
S29AL016J55TFNR10 is a boot sector flash memory. This device is designed to be programmed in-system with the standard system 3 volt VCC supply. A 12.0V VPP or 5VCC are not required for write or erase operations. The device can also be programmed in standard EPROM programmers. The device offers access times of up to 55 ns allowing high speed microprocessors to operate without wait states. To eliminate bus contention the device has separate chip enable (CE#), write enable (WE#) and output enable (OE#) controls. The device requires only a single 3.0 volt power supply for both read and write functions. Internally generated and regulated voltages are provided for the program and erase operations. This is entirely command set compatible with the JEDEC single-power-supply Flash standard. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine that controls the erase and programming circuitry.
- 55ns access speed option, thin small outline package (TSOP) standard pinout package type
- Temperature range from -40 to 125°C (extended), VCC = 3 - 3.6V, top boot sector device (CFI support)
- Single power supply operation, manufactured on 110nm process technology
- Secured silicon sector region, flexible sector architecture
- Temporary sector unprotect feature allows code changes in previously locked sectors
- Sectors can be locked in-system or via programming equipment
- Reduces overall programming time when issuing multiple program command sequences
- Pinout and software compatible with single-power supply flash, superior inadvertent write protection
- High performance, ultra low power consumption (typical values at 5MHz)
- Cycling endurance 1000000 cycles per sector typical, data retention 20 years typical
技术规格
并行NOR
16Mbit
2M x 8位 / 1M x 16位
并行
TSOP
-
55ns
3.6V
表面安装
125°C
No SVHC (25-Jun-2025)
16Mbit
2M x 8位 / 1M x 16位
并行口
TSOP
48引脚
-
2.7V
3V
-40°C
3V Parallel NOR Flash Memories
法律与环境
进行最后一道重要生产流程所在的地区原产地:Thailand
进行最后一道重要生产流程所在的地区
RoHS
RoHS
产品合规证书
