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产品概述
MT53E1G32D2FW-046 IT:A is an automotive LPDDR4 SDRAM. It is a high-speed, CMOS dynamic random-access memory device. This 8-bank device is internally configured with ×16 I/O.
- Operating voltage range from 1.10V VDD2/0.60V or 1.10V VDDQ
- 1 Gig x 32 configuration, LPDDR4, 2 die addressing
- 468ps, tCK RL = 36/40 clock time
- Frequency range from 2133 to 10MHz (data rate range: 4266–20 Mb/s perpin)
- 16n prefetch DDR architecture, 8 internal banks per channel for concurrent operation
- Single-data-rate CMD/ADR entry, bidirectional/differential data strobe per byte lane
- Programmable READ and WRITE latencies (RL/WL)
- Programmable and on-the-fly burst lengths (BL =16, 32)
- Directed per-bank refresh for concurrent bank operation and ease of command scheduling
- 200-ball TFBGA package, operating temperature range from -40°C to +95°C
技术规格
DRAM类型
Mobile LPDDR4
存储密度
32Gbit
记忆配置
1G x 32位
时钟频率
2.133GHz
IC 外壳 / 封装
TFBGA
额定电源电压
1.1V
芯片安装
表面安装
工作温度最高值
95°C
SVHC(高度关注物质)
No SVHC (17-Dec-2015)
DRAM密度
32Gbit
DRAM 内存配置
1G x 32bit
时钟频率最大值
2.133GHz
封装类型
TFBGA
针脚数
200引脚
存取时间
-
工作温度最小值
-40°C
产品范围
-
法律与环境
原产地:
进行最后一道重要生产流程所在的地区原产地:Singapore
进行最后一道重要生产流程所在的地区
进行最后一道重要生产流程所在的地区原产地:Singapore
进行最后一道重要生产流程所在的地区
税则号:85423239
US ECCN:EAR99
EU ECCN:NLR
RoHS 合规:是
RoHS
RoHS 邻苯二甲酸盐合规:是
RoHS
SVHC:No SVHC (17-Dec-2015)
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产品合规证书
重量(千克):.00149

