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IRF7480MTRPBF
功率场效应管, MOSFET, N通道, 40 V, 330 A, 950 µohm, DirectFET ME, 表面安装
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1,124 有货
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1,124 件可于 5-6 个工作日内送达(英国 库存)
包装选项
| 包装类型 | 数量 | 单价 (不含增值税): | 合计 |
|---|---|---|---|
| 切割卷带 | 1 | CNY28.950 | CNY28.95 |
切割卷带 & 复卷
| 数量 | 价钱 (含税) |
|---|---|
| 1+ | CNY28.950 (CNY32.7135) |
| 10+ | CNY18.850 (CNY21.3005) |
| 100+ | CNY13.060 (CNY14.7578) |
| 500+ | CNY10.640 (CNY12.0232) |
| 1000+ | CNY10.290 (CNY11.6277) |
品項附註
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产品概述
IRF7480MTRPBF is a DirectFET® N-channel power MOSFET. Typical applications include brushed motor drive applications, BLDC motor drive applications, battery-powered circuits, half-bridge and full-bridge topologies, synchronous rectifier applications, resonant mode power supplies, OR-ing and redundant power switches, DC/DC and AC/DC converters, and DC/AC inverters.
- Improved gate, avalanche and dynamic dv/dt ruggedness
- Fully characterized capacitance and avalanche SOA
- Enhanced body diode dv/dt and di/dt capability
- Drain-to-source breakdown voltage is 40V min at VGS = 0V, ID = 250µA, TJ = 25°C
- Static drain-to-source on-resistance is 0.95mohm typ at VGS = 10V, ID = 132A, TJ = 25°C
- Drain-to-source leakage current is 1.0µA max at VDS = 40V, VGS = 0V, TJ = 25°C
- Reverse recovery time is 44ns typ at TJ = 25°C, VR = 34V
- Reverse recovery current is 2.1A typ at TJ = 25°C
- DirectFET® ME package
- Operating junction and storage temperature range from -55 to + 150°C
技术规格
通道类型
N通道
电流, Id 连续
330A
晶体管封装类型
DirectFET ME
Rds(on)测试电压
10V
功率耗散
96W
工作温度最高值
150°C
合规
-
SVHC(高度关注物质)
No SVHC (25-Jun-2025)
漏源电压, Vds
40V
漏源接通状态电阻
950µohm
晶体管安装
表面安装
阈值栅源电压最大值
3V
针脚数
8引脚
产品范围
StrongIRFET, DirectFET
湿气敏感性等级
MSL 1 -无限制
法律与环境
原产地：
进行最后一道重要生产流程所在的地区原产地：China
进行最后一道重要生产流程所在的地区
进行最后一道重要生产流程所在的地区原产地：China
进行最后一道重要生产流程所在的地区
税则号：85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS 合规：是
RoHS
RoHS 邻苯二甲酸盐合规:是
RoHS
SVHC:No SVHC (25-Jun-2025)
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产品合规证书
重量（千克）：.000156