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ZVN3320FTA
功率场效应管, MOSFET, 增强模式, N通道, 200 V, 60 mA, 25 ohm, SOT-23, 表面安装
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1,037 有货
12,000 您现在可以预订货品了
1,037 件可于 5-6 个工作日内送达(英国 库存)
包装选项
| 包装类型 | 数量 | 单价 (不含增值税): | 合计 |
|---|---|---|---|
| 切割卷带 | 5 | CNY4.840 | CNY24.20 |
切割卷带 & 复卷
| 数量 | 价钱 (含税) |
|---|---|
| 5+ | CNY4.840 (CNY5.4692) |
| 50+ | CNY3.990 (CNY4.5087) |
| 100+ | CNY3.140 (CNY3.5482) |
| 500+ | CNY2.180 (CNY2.4634) |
| 1500+ | CNY2.140 (CNY2.4182) |
品項附註
此订单的信息已添加到您的订单确认邮件、发票和发货通知中。
产品概述
ZVN3320FTA is a N-channel enhancement mode vertical MOSFET. This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications. Typical applications include DC-DC converters, power-management functions, battery operated systems and solid-state relays, drivers: relays, solenoids, lamps, hammers, displays, memories, transistors, etc.
- Low input capacitance, low input/output leakage
- Drain-source voltage is 200V at TA=+25°C
- Gate-source voltage is ±20V at TA=+25°C
- Continuous drain current is 60mA at TA=+25°C
- Maximum body diode forward current is 60mA at TA=+25°C
- Pulsed source current (10µs pulse, duty cycle=1%) is 1A at TA=+25°C
- Power dissipation is 330mW
- Static drain-source on-resistance is 17ohm typ at VGS=10V, ID=100mA
- SOT23 package
- Operating and storage temperature range from -55 to +150°C
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技术规格
通道类型
N通道
电流, Id 连续
60mA
晶体管封装类型
SOT-23
Rds(on)测试电压
10V
功率耗散
330mW
工作温度最高值
150°C
合规
-
SVHC(高度关注物质)
No SVHC (04-Feb-2026)
漏源电压, Vds
200V
漏源接通状态电阻
25ohm
晶体管安装
表面安装
阈值栅源电压最大值
1V
针脚数
3引脚
产品范围
-
湿气敏感性等级
MSL 1 -无限制
相关产品
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法律与环境
原产地：
进行最后一道重要生产流程所在的地区原产地：China
进行最后一道重要生产流程所在的地区
进行最后一道重要生产流程所在的地区原产地：China
进行最后一道重要生产流程所在的地区
税则号：85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS 合规：是
RoHS
RoHS 邻苯二甲酸盐合规:是
RoHS
SVHC:No SVHC (04-Feb-2026)
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重量（千克）：.000544