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| 数量 | 价钱 (含税) |
|---|---|
| 1+ | CNY507.090 (CNY573.0117) |
产品信息
产品概述
EVLSTGAP3SXS-H is a half-bridge evaluation board for STGAP3SXS SiC MOSFETs isolated gate driver with protections. The STGAP3SXS is characterized by 10A current capability, rail-to-rail outputs and optimized UVLO and DESAT protection thresholds for SiC MOSFETS, which makes the device optimal for high-power motor drivers in industrial applications. The gate driver has a single output pin and a driver line for an external Miller CLAMP N-channel MOSFET, which optimizes positive and negative gate spikes' suppression during fast commutations in half-bridge topologies. The board is supplied by the 5V VAUX connection, which fed the isolated DC-DC converters for the low-side and high-side driving sections. The gate drivers can be directly supplied by VAUX if a 5V MCU is used, or by the onboard linear regulator if a 3.3V MCU is used. The PWM and Reset inputs can be easily controlled through dedicated connectors while diagnostic outputs are connected to an onboard LED.
- High-voltage rail up to 520V (limited by the MOSFET’s and capacitor’s rating)
- SCTWA70N120G2V-4 SiC MOSFETs: 1200V, 30mohm, 91A
- Compatible with 5V and 3.3V MCUs
- VDD logic supplied by onboard-generated 3.3V or VAUX = 5V
- On-brd DC-DC converter to supply high-side and low-side gate drivers, by 5V VAUX 5.2kV isolation
- Easy jumper selection of driving voltage configuration:+19/0V; +19/-4.7V; +17/0V; +17/-4.7V
- Fault LED indicators
- Maximum working voltage across isolation: 1200V
技术规格
STMicroelectronics
电源管理
半桥评估板 STGAP3SXS
No SVHC (25-Jun-2025)
STGAP3SXS
隔离栅极驱动器
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技术文档 (1)
法律与环境
进行最后一道重要生产流程所在的地区原产地:Italy
进行最后一道重要生产流程所在的地区
RoHS
RoHS
产品合规证书
