AFBR-S4N66P014M

AFBR-S4N66P014M is a Broadcom® NUV-MT single-channel silicon photomultiplier that is used for ultra-sensitive precision measurements of single photons. This SiPM is based on the NUV-MT technology, which combines improved photo-detection efficiency (PDE) with a decreased dark count rate and reduced crosstalk compared to the NUV-HD technology. The SPAD pitch is 40µm. Larger areas can be covered by tiling multiple AFBRS4N66P014M SiPMs. The encapsulation for good mechanical stability and robustness is realized by an epoxy clear mould compound, which is highly transparent down to UV wavelengths, resulting in a broad response in the visible light spectrum with high sensitivity toward the blue and near UV regions of the light spectrum. The Applications include X-ray and gamma-ray detection, nuclear medicine, positron emission tomography, safety and security, physics experiments, and cherenkov detection.

• High PDE (63% at 420nm), 4-side tileable, with high fill factors
• Cell pitch is 40μm, highly transparent epoxy protection layer
• Excellent SPTR and CRT, excellent uniformity of breakdown voltage and gain between devices
• Spectral range from 250 to 900nm (12V OV and 25°C)
• Peak sensitivity wavelength is 420nm typ (12V OV and 25°C)
• Breakdown voltage range from 32 to 33V (12V OV and 25°C)
• Temperature coefficient of breakdown voltage is 30mV/°C typ (12V OV and 25°C)
• Gain is 7.3× 10⁶ typ (12V OV and 25°C), 23% typ optical crosstalk (12V OV and 25°C)
• Nominal terminal capacitance is 1550pF typ (12V OV and 25°C)
• Operating temperature range from -20°C to +60°C