AS4C4M16SA-6BIN

产品概述

• 产品概述

  AS4C4M16SA-6BIN 64Mb SDRAM is a high-speed CMOS synchronous DRAM containing 64Mbits. It is internally configured as 4 Banks of 1M word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Read and write accesses to SDRAM are burst-oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a bank activate command which is then followed by a read or write command. An auto precharge function may be enabled to provide a self-timed row precharge that is initiated at the end of the burst sequence. The refresh functions, either auto or self refresh are easy to use. By having a programmable mode register, the system can choose most suitable modes to maximize its performance. It is well suited for applications requiring high memory bandwidth and particularly well suited to high-performance PC applications.

  • Fully synchronous operation, internal pipelined architecture
  • 1M word x 16-bit x 4-bank, programmable mode registers, CAS latency: 2 or 3
  • Burst length: 1, 2, 4, 8, or full page, burst type: sequential or interleaved, burst stop function
  • Auto refresh and self refresh, 4096 refresh cycles/64ms, LVTTL interface
  • CKE power down mode, single +3.3V ± 0.3V power supply
  • 166MHz frequency
  • 54-ball FBGA package
  • Industrial temperature range from -40 to 85°C