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SI1869DH-T1-E3
双路场效应管, MOSFET, 互补N与P沟道, 20 V, 20 V, 1.2 A, 1.2 A, 0.132 ohm
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产品概述
The SI1869DH-T1-E3 is a N/P-channel MOSFET ideally suited for high-side load switching in portable applications. The integrated n-channel level-shift device saves space by reducing external components. The slew rate is set externally so that rise-times can be tailored to different load types. The low ON-resistance p-channel TrenchFET is tailored for use as a load switch. The n-channel, with an external resistor, can be used as a level shift to drive the p-channel load-switch. The n-channel MOSFET has internal ESD protection and can be driven by logic signals as low as 1.5V.
- TrenchFET® power MOSFET
- Low profile
- Small footprint
- Adjustable slew-rate
技术规格
- 通道类型
互补N与P沟道
漏源电压Vds P沟道20V
连续漏极电流 Id P沟道1.2A
漏源导通电阻P沟道0.132ohm
针脚数6引脚
耗散功率P沟道1W
产品范围-
湿气敏感性等级MSL 1 -无限制
漏源电压Vds N沟道20V
连续漏极电流 Id N沟道1.2A
漏源通态电阻N沟道0.132ohm
晶体管封装类型SC-70
耗散功率N沟道1W
工作温度最高值150°C
合规-
SVHC(高度关注物质)No SVHC (23-Jan-2024)
法律与环境
- 原产地：
进行最后一道重要生产流程所在的地区原产地：China
进行最后一道重要生产流程所在的地区税则号：85412900US ECCN:EAR99EU ECCN:NLRRoHS 合规：是RoHS
RoHS 邻苯二甲酸盐合规:是RoHS
SVHC:No SVHC (23-Jan-2024)下载产品合规证书产品合规证书
重量（千克）：.000041