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| 数量 | 价钱 (含税) |
|---|---|
| 1+ | CNY19.920 (CNY22.5096) |
| 10+ | CNY13.520 (CNY15.2776) |
| 50+ | CNY12.840 (CNY14.5092) |
| 100+ | CNY12.160 (CNY13.7408) |
| 250+ | CNY11.440 (CNY12.9272) |
| 500+ | CNY11.120 (CNY12.5656) |
| 1000+ | CNY10.250 (CNY11.5825) |
| 2500+ | CNY10.050 (CNY11.3565) |
产品信息
产品概述
The LM5106SD/NOPB is a high-voltage Gate Driver designed to drive both the high-side and low-side N-channel MOSFETs in a synchronous buck or half bridge configuration. The floating high-side driver is capable of working with rail voltage up to 100V. The single control input is compatible with TTL signal levels and a single external resistor programs the switching transition dead-time through tightly matched turn-ON delay circuits. The robust level shift technology operates at high speed while consuming low power and provides clean output transitions. Under-voltage lockout disables the gate driver when either the low-side or the bootstrapped high-side supply voltage is below the operating threshold.
- Drives both a high-side and low-side N-channel MOSFET
- Single TTL compatible input
- Programmable turn-ON delays (dead-time)
- Enable input pin
- Supply rail under-voltage lockout protection
- Low power consumption
- Drives 1000pF with 15ns rise and 10ns fall time
- 118VDC Bootstrap supply voltage
- Green product and no Sb/Br
技术规格
2放大器
半桥
10引脚
表面安装
1.2A
8V
-40°C
115ns
-
MSL 1 -无限制
-
MOSFET
WSON
非反向
1.8A
14V
125°C
32ns
-
No SVHC (27-Jun-2018)
法律与环境
进行最后一道重要生产流程所在的地区原产地:Thailand
进行最后一道重要生产流程所在的地区
RoHS
RoHS
产品合规证书

