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| 数量 | 价钱 (含税) |
|---|---|
| 1+ | CNY8.010 (CNY9.0513) |
| 10+ | CNY4.980 (CNY5.6274) |
| 50+ | CNY4.750 (CNY5.3675) |
| 100+ | CNY4.520 (CNY5.1076) |
| 250+ | CNY4.430 (CNY5.0059) |
| 500+ | CNY4.340 (CNY4.9042) |
| 1000+ | CNY4.250 (CNY4.8025) |
| 2500+ | CNY4.160 (CNY4.7008) |
产品概述
The LF356N/NOPB is a monolithic JFET input precision Operational Amplifier to incorporate well-matched, high-voltage JFETs on the same chip with standard bipolar transistors (BI-FET™ Technology). These amplifiers feature low input bias and offset currents/low offset voltage and offset voltage drift, coupled with offset adjust, which does not degrade drift or common-mode rejection. The devices are also designed for high slew rate, wide bandwidth, extremely fast settling time, low voltage and current noise and a low 1/f noise corner.
- Fast slew rate
- Wide gain bandwidth
- Low input noise voltage
- Extremely fast settling time to 0.01%
- Replace expensive hybrid and module FET op amps
- Rugged JFETs allow blow-out free handling compared with MOSFET input devices
- Excellent for low noise applications using either high or low source impedance
- New output stage allows use of large capacitive loads (5,000pF) without stability problems
- Internal compensation and large differential input voltage capability
- Green product and no Sb/Br
警告
Device has limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
技术规格
1放大器
12V/µs
DIP
JFET
3mV
通孔安装
70°C
-
No SVHC (27-Jun-2018)
-
1个放大器
5MHz
10V 至 36V
8引脚
-
30pA
0°C
-
MSL 1 -无限制
DIP
5MHz
12V/µs
技术文档 (1)
法律与环境
进行最后一道重要生产流程所在的地区原产地:Malaysia
进行最后一道重要生产流程所在的地区
RoHS
RoHS
产品合规证书

