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1,057 件可于 5-6 个工作日内送达(英国 库存)
| 数量 | 价钱 (含税) |
|---|---|
| 1+ | CNY55.760 (CNY63.0088) |
| 10+ | CNY38.170 (CNY43.1321) |
| 50+ | CNY33.190 (CNY37.5047) |
| 100+ | CNY28.390 (CNY32.0807) |
包装规格:单件(切割供应)
最低: 1
多件: 1
CNY55.76 (CNY63.01 含税)
品項附註
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产品概述
The FCB20N60 is a N-channel SuperFET® high voltage super-junction MOSFET utilizes charge balance technology for outstanding low ON-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dV/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
- Ultra low gate charge (Qg = 75nC)
- Low effective output capacitance (Coss.eff = 165pF)
- 100% avalanche tested
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技术规格
通道类型
N通道
电流, Id 连续
20A
晶体管封装类型
TO-263 (D2PAK)
Rds(on)测试电压
10V
功率耗散
208W
工作温度最高值
150°C
合规
-
SVHC(高度关注物质)
Lead (27-Jun-2024)
漏源电压, Vds
600V
漏源接通状态电阻
0.19ohm
晶体管安装
表面安装
阈值栅源电压最大值
5V
针脚数
3引脚
产品范围
-
湿气敏感性等级
MSL 1 -无限制
技术文档 (1)
FCB20N60 的替代之选
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法律与环境
原产地:
进行最后一道重要生产流程所在的地区原产地:United States
进行最后一道重要生产流程所在的地区
进行最后一道重要生产流程所在的地区原产地:United States
进行最后一道重要生产流程所在的地区
税则号:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS 合规:Y-Ex
RoHS
RoHS 邻苯二甲酸盐合规:是
RoHS
SVHC:Lead (27-Jun-2024)
下载产品合规证书
产品合规证书
重量(千克):.001458

