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| 数量 | 价钱 (含税) |
|---|---|
| 1+ | CNY85.590 (CNY96.7167) |
| 5+ | CNY75.240 (CNY85.0212) |
| 10+ | CNY64.880 (CNY73.3144) |
| 50+ | CNY59.470 (CNY67.2011) |
| 100+ | CNY54.060 (CNY61.0878) |
| 250+ | CNY48.130 (CNY54.3869) |
产品概述
The IPW65R045C7 is a 650V N-channel CoolMOS™ Power MOSFET providing the world's lowest RDS (on) with low switching losses and efficiency improvements over the full load range. The new CoolMOS™ C7 series offers a ~50% reduction in turn-off losses (Eoss) compared to the CoolMOS™ CP, offering a GaN-like level of performance in PFC, TTF and other hard-switching topologies. The CoolMOS™ MOSFET offers a significant reduction of conduction, switching and driving losses and enable high power density and efficiency for superior power conversion systems. The latest state-of-the-art generation of high voltage power MOSFETs makes AC-DC power supplies more efficient, more compact, lighter and cooler than ever before.
- Reduced energy stored in output capacitance (Eoss)
- Lower gate charge
- Space-saving through reduction of parts
- Improved safety margin
- Lowest conduction losses
- Low switching losses
- Better light load efficiency
- Increasing power density
技术规格
N通道
46A
TO-247
10V
227W
150°C
-
No SVHC (25-Jun-2025)
650V
0.04ohm
通孔
3.5V
3引脚
-
-
IPW65R045C7FKSA1 的替代之选
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法律与环境
进行最后一道重要生产流程所在的地区原产地:China
进行最后一道重要生产流程所在的地区
RoHS
RoHS
产品合规证书

