IPW65R045C7FKSA1
功率场效应管, MOSFET, N通道, 650 V, 46 A, 0.04 ohm, TO-247, 通孔
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| 数量 | 价钱 (含税) |
|---|---|
| 1+ | CNY85.590 (CNY96.7167) |
| 5+ | CNY75.240 (CNY85.0212) |
| 10+ | CNY64.880 (CNY73.3144) |
| 50+ | CNY59.470 (CNY67.2011) |
| 100+ | CNY54.060 (CNY61.0878) |
| 250+ | CNY48.130 (CNY54.3869) |
产品信息
产品概述
The IPW65R045C7 is a 650V N-channel CoolMOS™ Power MOSFET providing the world's lowest RDS (on) with low switching losses and efficiency improvements over the full load range. The new CoolMOS™ C7 series offers a ~50% reduction in turn-off losses (Eoss) compared to the CoolMOS™ CP, offering a GaN-like level of performance in PFC, TTF and other hard-switching topologies. The CoolMOS™ MOSFET offers a significant reduction of conduction, switching and driving losses and enable high power density and efficiency for superior power conversion systems. The latest state-of-the-art generation of high voltage power MOSFETs makes AC-DC power supplies more efficient, more compact, lighter and cooler than ever before.
- Reduced energy stored in output capacitance (Eoss)
- Lower gate charge
- Space-saving through reduction of parts
- Improved safety margin
- Lowest conduction losses
- Low switching losses
- Better light load efficiency
- Increasing power density
技术规格
- 通道类型
N通道
电流, Id 连续46A
晶体管封装类型TO-247
Rds(on)测试电压10V
功率耗散227W
工作温度最高值150°C
合规-
SVHC(高度关注物质)No SVHC (25-Jun-2025)
漏源电压, Vds650V
漏源接通状态电阻0.04ohm
晶体管安装通孔
阈值栅源电压最大值3.5V
针脚数3引脚
产品范围-
湿气敏感性等级-
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法律与环境
- 原产地：
进行最后一道重要生产流程所在的地区原产地：China
进行最后一道重要生产流程所在的地区税则号：85412900US ECCN:EAR99EU ECCN:NLRRoHS 合规：是RoHS
RoHS 邻苯二甲酸盐合规:是RoHS
SVHC:No SVHC (25-Jun-2025)下载产品合规证书产品合规证书
重量（千克）：.009525