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| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY27.210 (CNY30.7473) |
| 10+ | CNY17.730 (CNY20.0349) |
| 100+ | CNY12.460 (CNY14.0798) |
| 500+ | CNY10.440 (CNY11.7972) |
| 1000+ | CNY9.710 (CNY10.9723) |
Price for:Each
Minimum: 1
Multiple: 1
CNY27.21 (CNY30.75 inc GST)
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSIHP12N60E-GE3Copy
Order Code2283637
Product RangeE
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id12A
Drain Source On State Resistance0.38ohm
Transistor Case StyleTO-220AB
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Power Dissipation147W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeE
Qualification-
MSL-
SVHCLead (04-Feb-2026)
Product Overview
The SIHP12N60E-GE3 is a 650V N-channel enhancement-mode Power MOSFET with single configuration. It is suitable for SMPS, server, telecom and PFC power supplies, solar, motor drives, induction heating, renewable energy and welding applications.
- Low figure-of-merit(FOM) RON x Qg
- Low input capacitance (CISS)
- Reduced switching and conduction losses
- Ultra low gate charge
- Avalanche energy rated
- Halogen-free
Applications
Industrial, Power Management, Communications & Networking, Lighting, Portable Devices, Computers & Computer Peripherals, Alternative Energy, Motor Drive & Control
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
12A
Transistor Case Style
TO-220AB
Rds(on) Test Voltage
10V
Power Dissipation
147W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (04-Feb-2026)
Drain Source Voltage Vds
600V
Drain Source On State Resistance
0.38ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
2V
No. of Pins
3Pins
Product Range
E
MSL
-
Technical Docs (2)
Alternatives for SIHP12N60E-GE3
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Associated Products
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (04-Feb-2026)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.002

