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SIHH125N60EF-T1GE3
Power MOSFET, N Channel, 600 V, 23 A, 0.125 ohm, PowerPAK, Surface Mount
Available to Order
Manufacturer Standard Lead Time: 46 week(s)
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Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | CNY56.650 | CNY56.65 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY56.650 (CNY64.0145) |
| 10+ | CNY38.310 (CNY43.2903) |
| 100+ | CNY27.880 (CNY31.5044) |
| 500+ | CNY26.590 (CNY30.0467) |
| 1000+ | CNY25.210 (CNY28.4873) |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSIHH125N60EF-T1GE3Copy
Manufacturer Standard Lead Time46 weeks
Order Code
Re-Reel3253833RL
Cut Tape3253833
Product RangeEF
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id23A
Drain Source On State Resistance0.125ohm
Transistor Case StylePowerPAK
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation156W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeEF
Qualification-
SVHCLead (04-Feb-2026)
Product Overview
SIHH125N60EF-T1GE3 is an EF series power MOSFET with fast body diode. Application includes server and telecom power supplies, switch mode power supplies (SMPS), power factor correction power supplies (PFC), high-intensity discharge (HID), fluorescent ballast lighting (lighting), welding, induction heating, motor drives, battery chargers, solar (PV inverters) (industrial).
- 4th generation E series technology low figure-of-merit (FOM) Ron x Qg
- Low effective capacitance (Co(er)
- Reduced switching and conduction losses
- Avalanche energy rated (UIS)
- 600V drain-source breakdown voltage (VGS = 0V, ID = 250μA )
- 0.109ohm typical drain-source on-state resistance (VGS = 10V, ID = 12A)
- 31nC typical total gate charge (VGS = 10V, ID = 12A, VDS = 480V)
- 12nC typical gate-source charge (VGS = 10V, ID = 12A, VDS = 480V)
- Single configuration
- PowerPAK package, operating junction and storage temperature range from -55 to +150°C
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
23A
Transistor Case Style
PowerPAK
Rds(on) Test Voltage
10V
Power Dissipation
156W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (04-Feb-2026)
Drain Source Voltage Vds
600V
Drain Source On State Resistance
0.125ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
5V
No. of Pins
8Pins
Product Range
EF
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Israel
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Israel
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (04-Feb-2026)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000125