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SIHG22N60E-GE3
Power MOSFET, N Channel, 600 V, 21 A, 0.18 ohm, TO-247AC, Through Hole
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSIHG22N60E-GE3Copy
Manufacturer Standard Lead Time37 weeks
Order Code2364080
Your Part Number
101 In Stock
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101 Delivery in 5-6 Business Days(UK stock)
| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY43.490 (CNY49.1437) |
| 10+ | CNY25.140 (CNY28.4082) |
| 100+ | CNY20.790 (CNY23.4927) |
| 500+ | CNY19.730 (CNY22.2949) |
| 1000+ | CNY17.670 (CNY19.9671) |
Price for:Each
Minimum: 1
Multiple: 1
CNY43.49 (CNY49.14 inc GST)
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSIHG22N60E-GE3Copy
Manufacturer Standard Lead Time37 weeks
Order Code2364080
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id21A
Drain Source On State Resistance0.18ohm
Transistor Case StyleTO-247AC
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Power Dissipation227W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead (04-Feb-2026)
Product Overview
E series power MOSFET suitable for use in server and telecom power supplies, switch mode power supplies (SMPS), power factor correction power supplies (PFC), lighting (High-intensity discharge (HID), fluorescent ballast lighting), industrial (welding, induction heating, motor drives, battery chargers, renewable energy and solar (PV inverters).
- Low figure-of-merit (FOM) Ron x Qi
- Low input capacitance (Ciss)
- Ultra-low gate charge (Qi)
- Avalanche energy rated (UIS)
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
21A
Transistor Case Style
TO-247AC
Rds(on) Test Voltage
10V
Power Dissipation
227W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (04-Feb-2026)
Drain Source Voltage Vds
600V
Drain Source On State Resistance
0.18ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
2V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (04-Feb-2026)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.006