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SIHA100N60E-GE3
Power MOSFET, N Channel, 600 V, 30 A, 0.1 ohm, TO-220FP, Through Hole
839 In Stock
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| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY31.370 (CNY35.4481) |
| 10+ | CNY21.980 (CNY24.8374) |
| 100+ | CNY20.290 (CNY22.9277) |
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CNY31.37 (CNY35.45 inc GST)
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSIHA100N60E-GE3Copy
Manufacturer Standard Lead Time41 weeks
Order Code3019069
Product RangeE
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id30A
Drain Source On State Resistance0.1ohm
Transistor Case StyleTO-220FP
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation35W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeE
Qualification-
SVHCLead (04-Feb-2026)
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
30A
Transistor Case Style
TO-220FP
Rds(on) Test Voltage
10V
Power Dissipation
35W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
600V
Drain Source On State Resistance
0.1ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
5V
No. of Pins
3Pins
Product Range
E
SVHC
Lead (04-Feb-2026)
Technical Docs (2)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Israel
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Israel
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (04-Feb-2026)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.001