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No Longer Manufactured
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI9433BDY-T1-GE3Copy
Order Code1794810
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id4.5A
Drain Source On State Resistance0.04ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max1.5V
Power Dissipation1.3W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (10-Jun-2022)
Alternatives for SI9433BDY-T1-GE3
1 Product Found
Product Overview
The SI9433BDY-T1-GE3 is a 20VDS TrenchFET® P-channel enhancement-mode Power MOSFET with antiparallel diode.
- Halogen-free
- -55 to 150°C Operating temperature range
Applications
Industrial, Power Management
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
4.5A
Transistor Case Style
SOIC
Rds(on) Test Voltage
4.5V
Power Dissipation
1.3W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (10-Jun-2022)
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.04ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.5V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85411000
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (10-Jun-2022)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000272
