Print Page
SI6562CDQ-T1-GE3
Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 6.7 A, 6.7 A, 0.18 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSI6562CDQ-T1-GE3Copy
Manufacturer Standard Lead Time65 weeks
Order Code2335341
Your Part Number
1,765 In Stock
9,000 more incoming. You can reserve stock now
1,765 Delivery in 5-6 Business Days(UK stock)
| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY14.350 (CNY16.2155) |
| 10+ | CNY9.090 (CNY10.2717) |
| 100+ | CNY6.060 (CNY6.8478) |
| 500+ | CNY4.760 (CNY5.3788) |
| 1000+ | CNY4.580 (CNY5.1754) |
| 5000+ | CNY4.390 (CNY4.9607) |
Price for:Each
Minimum: 1
Multiple: 1
CNY14.35 (CNY16.22 inc GST)
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI6562CDQ-T1-GE3Copy
Manufacturer Standard Lead Time65 weeks
Order Code2335341
Technical Datasheet
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds N Channel20V
Drain Source Voltage Vds P Channel20V
Continuous Drain Current Id N Channel6.7A
Continuous Drain Current Id P Channel6.7A
Drain Source On State Resistance N Channel0.18ohm
Drain Source On State Resistance P Channel0.18ohm
Transistor Case StyleTSSOP
No. of Pins8Pins
Power Dissipation N Channel1.6W
Power Dissipation P Channel1.6W
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (04-Feb-2026)
Product Overview
The SI6562CDQ-T1-GE3 is a N/P-channel MOSFET housed in a surface-mount package. It is suitable for load switch and DC-to-DC converter applications.
- TrenchFET® power MOSFET
Applications
Industrial, Power Management
Technical Specifications
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id P Channel
6.7A
Drain Source On State Resistance P Channel
0.18ohm
No. of Pins
8Pins
Power Dissipation P Channel
1.6W
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
20V
Continuous Drain Current Id N Channel
6.7A
Drain Source On State Resistance N Channel
0.18ohm
Transistor Case Style
TSSOP
Power Dissipation N Channel
1.6W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (04-Feb-2026)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (04-Feb-2026)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000092