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SI5513CDC-T1-GE3
Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 4 A, 4 A, 0.045 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSI5513CDC-T1-GE3
Order Code
Re-Reel3772765RL
Cut Tape3772765
Product RangeTrench Series
Your Part Number
1,260 In Stock
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1260 Delivery in 5-6 Business Days(UK stock)
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Re-Reel | 1 | CNY7.100 | CNY7.10 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY7.100 (CNY8.023) |
| 10+ | CNY4.450 (CNY5.0285) |
| 100+ | CNY2.890 (CNY3.2657) |
| 500+ | CNY2.230 (CNY2.5199) |
| 1000+ | CNY1.720 (CNY1.9436) |
| 5000+ | CNY1.580 (CNY1.7854) |
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI5513CDC-T1-GE3
Order Code
Re-Reel3772765RL
Cut Tape3772765
Product RangeTrench Series
Technical Datasheet
Channel TypeComplementary N and P Channel
Transistor PolarityComplementary N and P Channel
Drain Source Voltage Vds N Channel20V
Drain Source Voltage Vds20V
Continuous Drain Current Id4A
Drain Source Voltage Vds P Channel20V
On Resistance Rds(on)0.045ohm
Continuous Drain Current Id N Channel4A
Continuous Drain Current Id P Channel4A
Drain Source On State Resistance N Channel0.045ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Drain Source On State Resistance P Channel0.045ohm
Gate Source Threshold Voltage Max600mV
Transistor Case StyleChipFET
No. of Pins8Pins
Power Dissipation Pd3.1W
Power Dissipation N Channel3.1W
Power Dissipation P Channel3.1W
Operating Temperature Max150°C
Product RangeTrench Series
Qualification-
Automotive Qualification Standard-
SVHCNo SVHC (04-Feb-2026)
Technical Specifications
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds N Channel
20V
Continuous Drain Current Id
4A
On Resistance Rds(on)
0.045ohm
Continuous Drain Current Id P Channel
4A
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
0.045ohm
Transistor Case Style
ChipFET
Power Dissipation Pd
3.1W
Power Dissipation P Channel
3.1W
Product Range
Trench Series
Automotive Qualification Standard
-
Transistor Polarity
Complementary N and P Channel
Drain Source Voltage Vds
20V
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id N Channel
4A
Drain Source On State Resistance N Channel
0.045ohm
Rds(on) Test Voltage
4.5V
Gate Source Threshold Voltage Max
600mV
No. of Pins
8Pins
Power Dissipation N Channel
3.1W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (04-Feb-2026)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (04-Feb-2026)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001