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SI4948BEY-T1-GE3
Dual MOSFET, P Channel, 60 V, 2.4 A
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSI4948BEY-T1-GE3Copy
Order Code
Re-Reel1779277RL
Cut Tape1779277
Your Part Number
5,868 In Stock
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5,868 Delivery in 5-6 Business Days(UK stock)
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | CNY14.880 | CNY14.88 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY14.880 (CNY16.8144) |
| 10+ | CNY9.500 (CNY10.735) |
| 100+ | CNY6.810 (CNY7.6953) |
| 500+ | CNY5.410 (CNY6.1133) |
| 1000+ | CNY4.390 (CNY4.9607) |
| 5000+ | CNY4.230 (CNY4.7799) |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI4948BEY-T1-GE3Copy
Order Code
Re-Reel1779277RL
Cut Tape1779277
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds N Channel-
Drain Source Voltage Vds P Channel60V
Continuous Drain Current Id N Channel-
Continuous Drain Current Id P Channel2.4A
Drain Source On State Resistance N Channel-
Drain Source On State Resistance P Channel0.1ohm
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel-
Power Dissipation P Channel1.4W
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCNo SVHC (04-Feb-2026)
Product Overview
The SI4948BEY-T1-GE3 is a dual P-channel MOSFET housed in a surface-mount package.
- Halogen-free
- TrenchFET® power MOSFET
Applications
Industrial, Power Management
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds P Channel
60V
Continuous Drain Current Id P Channel
2.4A
Drain Source On State Resistance P Channel
0.1ohm
No. of Pins
8Pins
Power Dissipation P Channel
1.4W
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
-
Continuous Drain Current Id N Channel
-
Drain Source On State Resistance N Channel
-
Transistor Case Style
SOIC
Power Dissipation N Channel
-
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (04-Feb-2026)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Israel
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Israel
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (04-Feb-2026)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000127