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SI4816BDY-T1-E3
Dual MOSFET, LITTLE FOOT, N Channel + Schottky, 30 V, 30 V, 5.8 A, 5.8 A, 9300 µohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSI4816BDY-T1-E3Copy
Order Code
Re-Reel2547314RL
Cut Tape2547314
Your Part Number
Available to Order
Manufacturer Standard Lead Time: 50 week(s)
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Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | CNY23.080 | CNY23.08 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY23.080 (CNY26.0804) |
| 10+ | CNY14.840 (CNY16.7692) |
| 100+ | CNY10.440 (CNY11.7972) |
| 500+ | CNY8.380 (CNY9.4694) |
| 1000+ | CNY7.320 (CNY8.2716) |
| 5000+ | CNY7.040 (CNY7.9552) |
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI4816BDY-T1-E3Copy
Order Code
Re-Reel2547314RL
Cut Tape2547314
Technical Datasheet
Channel TypeN Channel + Schottky
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id N Channel5.8A
Continuous Drain Current Id P Channel5.8A
Drain Source On State Resistance N Channel9300µohm
Drain Source On State Resistance P Channel9300µohm
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel1.25W
Power Dissipation P Channel1.25W
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (04-Feb-2026)
Product Overview
The SI4816BDY-T1-E3 is a dual N-channel MOSFET with Schottky diode housed in a surface-mount package.
- LITTLE FOOT® Plus power MOSFET
- 100% Rg tested
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel + Schottky
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id P Channel
5.8A
Drain Source On State Resistance P Channel
9300µohm
No. of Pins
8Pins
Power Dissipation P Channel
1.25W
Product Range
-
MSL
-
Drain Source Voltage Vds N Channel
30V
Continuous Drain Current Id N Channel
5.8A
Drain Source On State Resistance N Channel
9300µohm
Transistor Case Style
SOIC
Power Dissipation N Channel
1.25W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (04-Feb-2026)
Technical Docs (2)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (04-Feb-2026)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000364