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SI4425BDY-T1-E3
P CHANNEL MOSFET
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSI4425BDY-T1-E3Copy
Order Code
Re-Reel1792163RL
Cut Tape1792163
Your Part Number
No Longer Manufactured
Packaging Options
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI4425BDY-T1-E3Copy
Order Code
Re-Reel1792163RL
Cut Tape1792163
Technical Datasheet
Channel TypeP Channel
Drain Source On State Resistance0.012ohm
Transistor Case StyleSOIC
Gate Source Threshold Voltage Max400mV
Power Dissipation2.5W
Product Range-
Qualification-
SVHCNo SVHC (21-Jan-2025)
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Technical Specifications
Channel Type
P Channel
Transistor Case Style
SOIC
Power Dissipation
2.5W
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source On State Resistance
0.012ohm
Gate Source Threshold Voltage Max
400mV
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Associated Products
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000099