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SI3590DV-T1-GE3
Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 2.5 A, 2.5 A, 0.062 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSI3590DV-T1-GE3Copy
Order Code
Re-Reel2056715RL
Cut Tape2056715
Your Part Number
1,224 In Stock
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1,224 Delivery in 5-6 Business Days(UK stock)
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 5 | CNY6.130 | CNY30.65 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 5+ | CNY6.130 (CNY6.9269) |
| 50+ | CNY5.100 (CNY5.763) |
| 100+ | CNY4.060 (CNY4.5878) |
| 500+ | CNY3.270 (CNY3.6951) |
| 1500+ | CNY3.210 (CNY3.6273) |
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI3590DV-T1-GE3Copy
Order Code
Re-Reel2056715RL
Cut Tape2056715
Technical Datasheet
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id N Channel2.5A
Continuous Drain Current Id P Channel2.5A
Drain Source On State Resistance N Channel0.062ohm
Drain Source On State Resistance P Channel0.062ohm
Transistor Case StyleTSOP
No. of Pins6Pins
Power Dissipation N Channel830mW
Power Dissipation P Channel830mW
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The SI3590DV-T1-GE3 is a 30V Dual N and P-channel TrenchFET® Power MOSFET. Ultra low RDS(on) for high Efficiency and optimized for high side and low side operation. The surface-mounted LITTLE FOOT® power MOSFET uses integrated circuit and small-signal packages which have been modified to provide the heat transfer capabilities required by power devices.
- Halogen-free according to IEC 61249-2-21 definition
- Low conduction losses
Applications
Power Management
Technical Specifications
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id P Channel
2.5A
Drain Source On State Resistance P Channel
0.062ohm
No. of Pins
6Pins
Power Dissipation P Channel
830mW
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
30V
Continuous Drain Current Id N Channel
2.5A
Drain Source On State Resistance N Channel
0.062ohm
Transistor Case Style
TSOP
Power Dissipation N Channel
830mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (3)
Associated Products
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000045