Print Page
SI2318DS-T1-GE3
N CHANNEL MOSFET
Image is for illustrative purposes only. Please refer to product description.
No Longer Manufactured
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2318DS-T1-GE3Copy
Order Code1867178
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id3A
Drain Source On State Resistance0.045ohm
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Qualification-
SVHCNo SVHC (21-Jan-2025)
Alternatives for SI2318DS-T1-GE3
3 Products Found
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
3A
Rds(on) Test Voltage
10V
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
40V
Drain Source On State Resistance
0.045ohm
Gate Source Threshold Voltage Max
3V
MSL
MSL 1 - Unlimited
Technical Docs (2)
Associated Products
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000046