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SI2318CDS-T1-GE3
Power MOSFET, N Channel, 40 V, 5.6 A, 0.042 ohm, SOT-23, Surface Mount
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Available to Order
Manufacturer Standard Lead Time: 28 week(s)
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| Quantity | Price (inc GST) |
|---|---|
| 5+ | CNY2.920 (CNY3.2996) |
| 10+ | CNY2.130 (CNY2.4069) |
| 100+ | CNY1.710 (CNY1.9323) |
| 500+ | CNY1.400 (CNY1.582) |
| 1000+ | CNY1.230 (CNY1.3899) |
| 5000+ | CNY1.160 (CNY1.3108) |
Price for:Each
Minimum: 5
Multiple: 5
CNY14.60 (CNY16.50 inc GST)
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2318CDS-T1-GE3Copy
Order Code1858941
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id5.6A
Drain Source On State Resistance0.042ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.2V
Power Dissipation2.1W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (04-Feb-2026)
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
5.6A
Transistor Case Style
SOT-23
Rds(on) Test Voltage
10V
Power Dissipation
2.1W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (04-Feb-2026)
Drain Source Voltage Vds
40V
Drain Source On State Resistance
0.042ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.2V
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (2)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (04-Feb-2026)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000008