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SI2308BDS-T1-GE3
Power MOSFET, N Channel, 60 V, 2.3 A, 0.156 ohm, TO-236, Surface Mount
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Available to Order
Manufacturer Standard Lead Time: 20 week(s)
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| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY6.410 (CNY7.2433) |
| 10+ | CNY3.950 (CNY4.4635) |
| 100+ | CNY2.900 (CNY3.277) |
| 500+ | CNY2.390 (CNY2.7007) |
| 1000+ | CNY1.600 (CNY1.808) |
| 5000+ | CNY1.480 (CNY1.6724) |
Price for:Each
Minimum: 1
Multiple: 1
CNY6.41 (CNY7.24 inc GST)
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2308BDS-T1-GE3
Order Code1794782
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id2.3A
Transistor Case StyleTO-236
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1V
Power Dissipation1.66W
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (04-Feb-2026)
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
2.3A
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1V
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (04-Feb-2026)
Drain Source Voltage Vds
60V
Transistor Case Style
TO-236
Rds(on) Test Voltage
10V
Power Dissipation
1.66W
Product Range
-
MSL
-
Technical Docs (3)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85411000
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (04-Feb-2026)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0014