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SI2301CDS-T1-GE3.
P CHANNEL MOSFET, -20V, 3.1A TO-236
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No Longer Stocked
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2301CDS-T1-GE3.Copy
Order Code1690262
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id3.1A
Drain Source On State Resistance0.142ohm
Transistor Case StyleTO-236
Transistor MountingSurface Mount
Rds(on) Test Voltage2.5V
Gate Source Threshold Voltage Max400mV
Power Dissipation860mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (17-Jan-2023)
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2 Products Found
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
3.1A
Transistor Case Style
TO-236
Rds(on) Test Voltage
2.5V
Power Dissipation
860mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (17-Jan-2023)
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.142ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
400mV
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (1)
Associated Products
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Tariff No:85412100
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:No SVHC (17-Jan-2023)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000109