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SI1036X-T1-GE3
Dual MOSFET, N Channel, 30 V, 30 V, 610 mA, 610 mA, 0.45 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSI1036X-T1-GE3Copy
Manufacturer Standard Lead Time80 weeks
Order Code
Re-Reel3929262RL
Cut Tape3929262
Product RangeTrenchFET Series
Your Part Number
325 In Stock
24,000 more incoming. You can reserve stock now
325 Delivery in 5-6 Business Days(UK stock)
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Re-Reel | 5 | CNY5.030 | CNY25.15 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 5+ | CNY5.030 (CNY5.6839) |
| 10+ | CNY3.120 (CNY3.5256) |
| 100+ | CNY2.000 (CNY2.260) |
| 500+ | CNY1.520 (CNY1.7176) |
| 1000+ | CNY1.130 (CNY1.2769) |
| 5000+ | CNY0.883 (CNY0.9978) |
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI1036X-T1-GE3Copy
Manufacturer Standard Lead Time80 weeks
Order Code
Re-Reel3929262RL
Cut Tape3929262
Product RangeTrenchFET Series
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds30V
Drain Source Voltage Vds N Channel30V
Continuous Drain Current Id610mA
Drain Source Voltage Vds P Channel30V
On Resistance Rds(on)0.45ohm
Continuous Drain Current Id N Channel610mA
Continuous Drain Current Id P Channel610mA
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.45ohm
Rds(on) Test Voltage4.5V
Drain Source On State Resistance P Channel0.45ohm
Transistor Case StyleSC-89
Gate Source Threshold Voltage Max1V
No. of Pins6Pins
Power Dissipation Pd220mW
Power Dissipation N Channel220mW
Power Dissipation P Channel220mW
Operating Temperature Max150°C
Product RangeTrenchFET Series
Qualification-
Automotive Qualification Standard-
SVHCNo SVHC (04-Feb-2026)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
30V
Continuous Drain Current Id
610mA
On Resistance Rds(on)
0.45ohm
Continuous Drain Current Id P Channel
610mA
Drain Source On State Resistance N Channel
0.45ohm
Drain Source On State Resistance P Channel
0.45ohm
Gate Source Threshold Voltage Max
1V
Power Dissipation Pd
220mW
Power Dissipation P Channel
220mW
Product Range
TrenchFET Series
Automotive Qualification Standard
-
SVHC
No SVHC (04-Feb-2026)
Channel Type
N Channel
Drain Source Voltage Vds N Channel
30V
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id N Channel
610mA
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
4.5V
Transistor Case Style
SC-89
No. of Pins
6Pins
Power Dissipation N Channel
220mW
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (04-Feb-2026)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.001