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No Longer Manufactured
Product Information
ManufacturerVISHAY
Manufacturer Part NoIRFP31N50LPBFCopy
Order Code8658528
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds500V
Continuous Drain Current Id31A
Drain Source On State Resistance0.18ohm
Transistor Case StyleTO-247AC
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation460W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCLead (19-Jan-2021)
Alternatives for IRFP31N50LPBF
2 Products Found
Product Overview
The IRFP31N50LPBF is a N-channel enhancement-mode Power MOSFET with lower gate charge.
- Superfast body diode eliminates the need for external diodes
- Simple drive requirements
- Enhanced dV/dt capabilities offer improved ruggedness
- Higher gate voltage threshold offers improved noise immunity
Applications
Industrial, Power Management, Communications & Networking, Motor Drive & Control
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
31A
Transistor Case Style
TO-247AC
Rds(on) Test Voltage
10V
Power Dissipation
460W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (19-Jan-2021)
Drain Source Voltage Vds
500V
Drain Source On State Resistance
0.18ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
5V
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (3)
Associated Products
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (19-Jan-2021)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.006
