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IRFBE30PBF-BE3
Power MOSFET, N Channel, 800 V, 4.1 A, 3 ohm, TO-220AB, Through Hole
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999 In Stock
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| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY21.350 (CNY24.1255) |
| 10+ | CNY15.160 (CNY17.1308) |
| 100+ | CNY11.720 (CNY13.2436) |
| 500+ | CNY9.380 (CNY10.5994) |
| 1000+ | CNY8.160 (CNY9.2208) |
| 5000+ | CNY7.640 (CNY8.6332) |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
CNY21.35 (CNY24.13 inc GST)
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoIRFBE30PBF-BE3Copy
Order Code4853588
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds800V
Continuous Drain Current Id4.1A
Drain Source On State Resistance3ohm
Transistor Case StyleTO-220AB
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation125W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead (04-Feb-2026)
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
4.1A
Transistor Case Style
TO-220AB
Rds(on) Test Voltage
10V
Power Dissipation
125W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
800V
Drain Source On State Resistance
3ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
SVHC
Lead (04-Feb-2026)
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Israel
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Israel
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (04-Feb-2026)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.015