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IRF620PBF-BE3
Power MOSFET, N Channel, 200 V, 5.2 A, 0.8 ohm, TO-220AB, Through Hole
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900 In Stock
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| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY11.650 (CNY13.1645) |
| 10+ | CNY8.270 (CNY9.3451) |
| 100+ | CNY6.400 (CNY7.232) |
| 500+ | CNY5.120 (CNY5.7856) |
| 1000+ | CNY4.450 (CNY5.0285) |
| 5000+ | CNY4.170 (CNY4.7121) |
Price for:Each
Minimum: 1
Multiple: 1
CNY11.65 (CNY13.16 inc GST)
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Product Information
ManufacturerVISHAY
Manufacturer Part NoIRF620PBF-BE3Copy
Order Code4853569
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds200V
Continuous Drain Current Id5.2A
Drain Source On State Resistance0.8ohm
Transistor Case StyleTO-220AB
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation50W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead (04-Feb-2026)
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
5.2A
Transistor Case Style
TO-220AB
Rds(on) Test Voltage
10V
Power Dissipation
50W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
200V
Drain Source On State Resistance
0.8ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
SVHC
Lead (04-Feb-2026)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Israel
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Israel
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (04-Feb-2026)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.015