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IRF510PBF-BE3
Power MOSFET, N Channel, 100 V, 5.6 A, 0.54 ohm, TO-220AB, Through Hole
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| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY9.210 (CNY10.4073) |
| 10+ | CNY6.540 (CNY7.3902) |
| 100+ | CNY5.060 (CNY5.7178) |
| 500+ | CNY4.050 (CNY4.5765) |
| 1000+ | CNY3.520 (CNY3.9776) |
| 5000+ | CNY3.300 (CNY3.729) |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
CNY9.21 (CNY10.41 inc GST)
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoIRF510PBF-BE3Copy
Order Code4853564
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id5.6A
Drain Source On State Resistance0.54ohm
Transistor Case StyleTO-220AB
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation43W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCLead (04-Feb-2026)
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
5.6A
Transistor Case Style
TO-220AB
Rds(on) Test Voltage
10V
Power Dissipation
43W
Operating Temperature Max
175°C
Qualification
-
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.54ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
SVHC
Lead (04-Feb-2026)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Israel
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Israel
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (04-Feb-2026)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.015