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BPW85
Phototransistor, 850 nm, 50 °, 100 mW, 2 Pins, T-1 (3mm)
Image is for illustrative purposes only. Please refer to product description.
10,952 In Stock
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10952 Delivery in 5-6 Business Days(UK stock)
| Quantity | Price (inc GST) |
|---|---|
| 5+ | CNY5.270 (CNY5.9551) |
| 10+ | CNY3.610 (CNY4.0793) |
| 100+ | CNY2.640 (CNY2.9832) |
| 500+ | CNY2.190 (CNY2.4747) |
| 1000+ | CNY1.930 (CNY2.1809) |
Price for:Each
Minimum: 5
Multiple: 5
CNY26.35 (CNY29.78 inc GST)
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Overview
The BPW85 is a clear Silicon NPN Phototransistor with high radiant sensitivity. It is sensitive to visible and near infrared radiation and it has high photo and radiant sensitivity.
- Fast response times
- ±25° Angle of half sensitivity
Applications
Sensing & Instrumentation
Technical Specifications
Wavelength Typ
850nm
Power Consumption
100mW
Transistor Case Style
T-1 (3mm)
Automotive Qualification Standard
-
SVHC
No SVHC (07-Nov-2024)
Viewing Angle
50°
No. of Pins
2Pins
Product Range
-
MSL
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Thailand
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Thailand
Country in which last significant manufacturing process was carried out
Tariff No:85414900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000136