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STW12NK80Z
Power MOSFET, N Channel, 800 V, 10.5 A, 0.65 ohm, TO-247, Through Hole
Image is for illustrative purposes only. Please refer to product description.
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTW12NK80ZCopy
Manufacturer Standard Lead Time24 weeks
Order Code9803858
Your Part Number
Available to Order
Manufacturer Standard Lead Time: 24 week(s)
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| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY47.370 (CNY53.5281) |
| 10+ | CNY27.350 (CNY30.9055) |
| 100+ | CNY21.940 (CNY24.7922) |
| 500+ | CNY21.020 (CNY23.7526) |
| 1000+ | CNY20.790 (CNY23.4927) |
Price for:Each
Minimum: 1
Multiple: 1
CNY47.37 (CNY53.53 inc GST)
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTW12NK80ZCopy
Manufacturer Standard Lead Time24 weeks
Order Code9803858
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds800V
Continuous Drain Current Id10.5A
Drain Source On State Resistance0.65ohm
Transistor Case StyleTO-247
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.75V
Power Dissipation190W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The STW12NK80Z is a SuperMESH™ N-channel Power MOSFET offers Zener-protection and minimized gate charge. This Power MOSFET developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in ON-resistance, this device is designed to ensure a high level of dV/dt capability for the most demanding applications.
- 100% Avalanche tested
- Improved ESD capability
- Very good manufacturing reliability
Applications
Industrial, Power Management
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
10.5A
Transistor Case Style
TO-247
Rds(on) Test Voltage
10V
Power Dissipation
190W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
800V
Drain Source On State Resistance
0.65ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
3.75V
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (2)
Associated Products
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.006