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STQ1NK60ZR-AP
Power MOSFET, N Channel, 600 V, 400 mA, 13 ohm, TO-92, Through Hole
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ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTQ1NK60ZR-APCopy
Manufacturer Standard Lead Time22 weeks
Order Code1752179
Your Part Number
3,017 In Stock
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| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY3.620 (CNY4.0906) |
| 10+ | CNY2.470 (CNY2.7911) |
| 100+ | CNY1.900 (CNY2.147) |
| 500+ | CNY1.840 (CNY2.0792) |
| 1000+ | CNY1.640 (CNY1.8532) |
| 5000+ | CNY1.430 (CNY1.6159) |
Price for:Each
Minimum: 1
Multiple: 1
CNY3.62 (CNY4.09 inc GST)
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTQ1NK60ZR-APCopy
Manufacturer Standard Lead Time22 weeks
Order Code1752179
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id400mA
Drain Source On State Resistance13ohm
Transistor Case StyleTO-92
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.75V
Power Dissipation3W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The STQ1NK60ZR-AP is a SuperMESH™ N-channel Power MOSFET offers Zener-protection and minimized gate charge. This Power MOSFET developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in ON-resistance, this device is designed to ensure a high level of dV/dt capability for the most demanding applications.
- 100% Avalanche tested
- Extremely high dV/dt capability
Applications
Industrial, Power Management
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
400mA
Transistor Case Style
TO-92
Rds(on) Test Voltage
10V
Power Dissipation
3W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
600V
Drain Source On State Resistance
13ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
3.75V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (3)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0002