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STP62NS04Z
Power MOSFET, N Channel, 33 V, 62 A, 0.0125 ohm, TO-220, Through Hole
Image is for illustrative purposes only. Please refer to product description.
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTP62NS04ZCopy
Manufacturer Standard Lead Time40 weeks
Order Code9512594
Your Part Number
Available to Order
Manufacturer Standard Lead Time: 40 week(s)
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| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY12.070 (CNY13.6391) |
| 10+ | CNY7.930 (CNY8.9609) |
| 100+ | CNY6.060 (CNY6.8478) |
| 500+ | CNY5.030 (CNY5.6839) |
| 1000+ | CNY4.440 (CNY5.0172) |
| 5000+ | CNY4.240 (CNY4.7912) |
Price for:Each
Minimum: 1
Multiple: 1
CNY12.07 (CNY13.64 inc GST)
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTP62NS04ZCopy
Manufacturer Standard Lead Time40 weeks
Order Code9512594
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds33V
Continuous Drain Current Id62A
Drain Source On State Resistance0.0125ohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation110W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
Product Overview
The STP62NS04Z is a N-channel clamped fully protected Power MOSFET produced by using most advanced MESH OVERLAY™ process based on strip layout. The inherent benefits of this new technology coupled with the extra clamping capabilities make this product particularly suitable for the harshest operating conditions such as those encountered in the automotive environment. It is also recommended for any other application requiring extra ruggedness.
- 100% Avalanche tested
- Low capacitance and gate charge
- 175°C Maximum junction temperature
Applications
Automotive, Power Management, Industrial
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
62A
Transistor Case Style
TO-220
Rds(on) Test Voltage
10V
Power Dissipation
110W
Operating Temperature Max
175°C
Qualification
-
Drain Source Voltage Vds
33V
Drain Source On State Resistance
0.0125ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
Technical Docs (3)
Associated Products
4 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.008165