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STP30N65M5
Power MOSFET, N Channel, 650 V, 22 A, 0.125 ohm, TO-220, Through Hole
Image is for illustrative purposes only. Please refer to product description.
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTP30N65M5Copy
Manufacturer Standard Lead Time28 weeks
Order Code2098315
Your Part Number
Available to Order
Manufacturer Standard Lead Time: 28 week(s)
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| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY60.300 (CNY68.139) |
| 10+ | CNY33.210 (CNY37.5273) |
| 100+ | CNY30.470 (CNY34.4311) |
| 500+ | CNY28.490 (CNY32.1937) |
| 1000+ | CNY27.950 (CNY31.5835) |
Price for:Each
Minimum: 1
Multiple: 1
CNY60.30 (CNY68.14 inc GST)
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTP30N65M5Copy
Manufacturer Standard Lead Time28 weeks
Order Code2098315
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds650V
Continuous Drain Current Id22A
Drain Source On State Resistance0.125ohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation140W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The STP30N65M5 is a MDmesh™ N-channel Power MOSFET offers excellent switching performance. This MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics' well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low ON-resistance, which is unmatched among silicon based Power MOSFET, making it especially suitable for applications which require superior power density and outstanding efficiency.
- Worldwide best RDS (ON) area
- Easy to drive
- High dV/dt capability
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
22A
Transistor Case Style
TO-220
Rds(on) Test Voltage
10V
Power Dissipation
140W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
650V
Drain Source On State Resistance
0.125ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (3)
Associated Products
5 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.19