STP11NM80
Power MOSFET, N Channel, 800 V, 11 A, 0.4 ohm, TO-220, Through Hole
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| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY55.970 (CNY63.2461) |
| 10+ | CNY30.010 (CNY33.9113) |
| 100+ | CNY27.500 (CNY31.075) |
| 500+ | CNY24.460 (CNY27.6398) |
| 1000+ | CNY23.980 (CNY27.0974) |
Product Information
Product Overview
The STP11NM80 is a MDmesh™ N-channel Power MOSFET features low input capacitance and gate charge. This Power MOSFET developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. This device offers extremely low ON-resistance, high dV/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, this Power MOSFET boasts an overall dynamic performance which is superior to similar products on the market.
- Low gate input resistance
Applications
Industrial, Power Management
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
N Channel
11A
TO-220
10V
150W
150°C
-
No SVHC (25-Jun-2025)
800V
0.4ohm
Through Hole
4V
3Pins
-
-
Technical Docs (2)
Alternatives for STP11NM80
2 Products Found
Associated Products
3 Products Found
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate