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STGSH50M120D
IGBT Module, Dual [Half Bridge], 69 A, 1.8 V, 536 W, 175 °C, ACEPACK SMIT
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10 In Stock
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10 Delivery in 5-6 Business Days(UK stock)
| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY148.690 (CNY168.0197) |
| 5+ | CNY127.530 (CNY144.1089) |
| 10+ | CNY106.370 (CNY120.1981) |
| 50+ | CNY100.890 (CNY114.0057) |
| 100+ | CNY95.400 (CNY107.802) |
| 250+ | CNY94.880 (CNY107.2144) |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
CNY148.69 (CNY168.02 inc GST)
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Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTGSH50M120D
Order Code4632559
Technical Datasheet
IGBT ConfigurationDual [Half Bridge]
Continuous Collector Current69A
Collector Emitter Saturation Voltage1.8V
Power Dissipation536W
Operating Temperature Max175°C
Transistor Case StyleACEPACK SMIT
IGBT TerminationSolder
Collector Emitter Voltage Max1.2kV
IGBT TechnologyTrench Field Stop
Transistor MountingSurface Mount
Product Range-
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
IGBT Configuration
Dual [Half Bridge]
Collector Emitter Saturation Voltage
1.8V
Operating Temperature Max
175°C
IGBT Termination
Solder
IGBT Technology
Trench Field Stop
Product Range
-
Continuous Collector Current
69A
Power Dissipation
536W
Transistor Case Style
ACEPACK SMIT
Collector Emitter Voltage Max
1.2kV
Transistor Mounting
Surface Mount
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001