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STB12NM50T4
Power MOSFET, N Channel, 550 V, 12 A, 0.3 ohm, TO-263 (D2PAK), Surface Mount
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ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTB12NM50T4
Order Code
Re-Reel2344094RL
Cut Tape2344094
Your Part Number
179 In Stock
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179 Delivery in 5-6 Business Days(UK stock)
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | CNY41.270 | CNY41.27 |
Cut Tape & Re-Reel
| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY41.270 (CNY46.6351) |
| 10+ | CNY27.650 (CNY31.2445) |
| 100+ | CNY19.730 (CNY22.2949) |
| 500+ | CNY19.050 (CNY21.5265) |
| 1000+ | CNY17.990 (CNY20.3287) |
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTB12NM50T4
Order Code
Re-Reel2344094RL
Cut Tape2344094
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds550V
Continuous Drain Current Id12A
Drain Source On State Resistance0.3ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation160W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The STB12NM50T4 is a MDmesh™ N-channel Power MOSFET designed as MOSFET technology that associates the multiple drain process with PowerMESH™ horizontal layout. The device has an outstanding low ON-resistance, impressively high dV/dt and excellent avalanche characteristics.
- High dV/dt and avalanche capabilities
- 100% Avalanche tested
- Low input capacitance and gate charge
- Tight process control and high manufacturing yields
- Low gate input resistance
- -65 to 150°C Operating junction temperature range
Applications
Power Management, Industrial
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
12A
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation
160W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
550V
Drain Source On State Resistance
0.3ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (2)
Associated Products
3 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00197