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STB10NK60ZT4
Power MOSFET, N Channel, 600 V, 4.5 A, 0.65 ohm, TO-263 (D2PAK), Surface Mount
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ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTB10NK60ZT4Copy
Manufacturer Standard Lead Time23 weeks
Order Code1751968
Your Part Number
1,482 In Stock
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| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY40.950 (CNY46.2735) |
| 10+ | CNY26.850 (CNY30.3405) |
| 100+ | CNY19.970 (CNY22.5661) |
| 500+ | CNY16.720 (CNY18.8936) |
| 1000+ | CNY14.550 (CNY16.4415) |
| 5000+ | CNY14.260 (CNY16.1138) |
Price for:Each
Minimum: 1
Multiple: 1
CNY40.95 (CNY46.27 inc GST)
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Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTB10NK60ZT4Copy
Manufacturer Standard Lead Time23 weeks
Order Code1751968
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id4.5A
Drain Source On State Resistance0.65ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.75V
Power Dissipation115W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The STB10NK60ZT4 is a SuperMESH™ N-channel Power MOSFET offers Zener-protection and minimized gate charge. This Power MOSFET developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well-established strip based PowerMESH™ layout. In addition to a significant reduction in ON-resistance, this device is designed to ensure a high level of dV/dt capability for the most demanding applications.
- Extremely high dV/dt capability
- 100% Avalanche tested
Applications
Industrial, Power Management
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
4.5A
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation
115W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
600V
Drain Source On State Resistance
0.65ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3.75V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85423300
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.002722