Infineon CoolSiC™ MOSFET power modules open up opportunities for inverter designers to realise outstanding levels of efficiency and power density. The EasyPACK™ 1C and 2C CoolSiC™ MOSFET M2 .XT four-pack and three-level modules are 1200 V, 8 mΩ, and 13 mΩ devices featuring an NTC temperature sensor, pre-applied thermal interface material 2.0, and high-current PressFIT contact technology.
Features and Benefits
Features
- Improved package concept
- XT interconnection technology
- CoolSiC M2 chip technology
- High current PressFIT pins
- Integrated NTC temperature sensor
- Overload conditions: TVJ over up to +200°C
- Enlarged gate-source voltage window
- Thermal Interface Material (TIM) 2.0
Benefits
- Outstanding module efficiency
- System efficiency improvement
- Enhanced lifetime
- High temperature withstand capability
- Reduction of static losses
- Compact design
- Full compatibility to EasyPACK™ B-series
Applications
Fuel-cell DC-DC boost converter
EV charging
Featured Products

F4-13MXTR12C1M2_H11
EasyPACK™ 1C CoolSiC™ MOSFET M2 .XT, a four-pack module 1200 V, 13 mΩ with NTC temperature sensor and a high-current PressFIT contact technology.

F4-13MXTR12C1M2Q_H11
EasyPACK™ 1C CoolSiC™ MOSFET M2 .XT, a four-pack module 1200 V, 13 mΩ with NTC temperature sensor, pre-applied thermal interface material 2.0, and a high-current PressFIT contact technology

F3L8MXTR12C2M2_H11
EasyPACK™ 2C CoolSiC™ MOSFET M2 .XT, a three-level 1200 V, 8 mΩ with NTC temperature sensor and a high-current PressFIT contact technology.

F3L8MXTR12C2M2Q_H11
EasyPACK™ 2C CoolSiC™ MOSFET M2 .XT, a three-level module 1200 V, 8 mΩ with NTC temperature sensor, pre-applied thermal interface material 2.0, and a high-current PressFIT contact technology.

F4-8MXTR12C2M2_H11
EasyPACK™ 2C CoolSiC™ MOSFET M2 .XT, a four-pack module 1200 V, 8 mΩ with NTC temperature sensor and a high-current PressFIT contact technology.

F4-8MXTR12C2M2Q_H11
EasyPACK™ 2C CoolSiC™ MOSFET M2 .XT, a four-pack module 1200 V, 8 mΩ with NTC temperature sensor, pre-applied thermal interface material 2.0, and a high-current PressFIT contact technology.