MMUN2211LT1G
Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50 V, 100 mA, 10 kohm, 10 kohm
33,000 more incoming. You can reserve stock now
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 5 | CNY0.644 | CNY3.22 |
| Quantity | Price (inc GST) |
|---|---|
| 5+ | CNY0.644 (CNY0.7277) |
| 50+ | CNY0.524 (CNY0.5921) |
| 100+ | CNY0.404 (CNY0.4565) |
| 500+ | CNY0.255 (CNY0.2882) |
| 1500+ | CNY0.250 (CNY0.2825) |
| Quantity | Price (inc GST) |
|---|---|
| 3000+ | CNY0.169 (CNY0.191) |
| 9000+ | CNY0.166 (CNY0.1876) |
Product Information
Product Overview
The MMUN2211LT1G from On Semiconductor are NPN digital transistor in 3 pin SOT-23 (TO−236) package. Digital transistor is designed to replace a single device and its external resistor bias network. The bias resistor transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors, a series base resistor and a base emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.
- Simplifies circuit design
- Compact board space
- Reduced component count
- AEC-Q101 qualified
- Base input resistor is 10Kohm
- Base emitter resistor is 10kohm
- Collector emitter voltage VCEO of 50VDC
- Continuous collector current of 100mAdc
Applications
Power Management, Consumer Electronics, Portable Devices, Industrial
Technical Specifications
Single NPN
50V
100mA
100mA
10kohm
SOT-23
3 Pin
400mW
35hFE
-
-
Single NPN
50V
-
10kohm
1(Ratio)
SOT-23
Surface Mount
150°C
-
AEC-Q101
No SVHC (25-Jun-2025)
Technical Docs (2)
Alternatives for MMUN2211LT1G
4 Products Found
Associated Products
2 Products Found
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate